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DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2371/2SK2372
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
* Low On-Resistance
20.0 0.2 1.0
15.7 MAX. 4
3.2 0.2
4.7 MAX. 1.5 7.0
2SK2368: RDS(ON) = 0.27 (VGS = 13 V, ID = 10 A) * Low Ciss Ciss = 3600 pF TYP. * High Avalanche Capability Ratings
1 3.0 0.2
2
3
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage (2SK2371/2SK2372) VDSS Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (TC = 25 C) Total Power Dissipation (Ta = 25 C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy**
* PW 10 s, Duty Cycle 1 % ** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0
19 MIN.
450/500 30 25 100 160 3.0 150 -55 ~ +150 25 446
V V A A W W C C A mJ
2.2 0.2 5.45
1.0 0.2 5.45
4.5 0.2
2SK2367: RDS(ON) = 0.25 (VGS = 13 V, ID = 10 A)
6.0
0.6 0.1
2.8 0.1
VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS
MP-88
1. Gate 2. Drain 3. Source 4. Fin (Drain)
Drain
Gate
Body Diode
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Source
Document No. TC-2505 (O.D. No. TC-8064 Date Published January 1995 P Printed in Japan
(c)
1995
2SK2371/2SK2372
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Drain to Source On-Resistance SYMBOL RDS(on) MIN. TYP. 0.2 0.22 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) yfs IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 3600 700 50 40 70 160 60 95 20 40 1.0 500 4.5 2.5 8.0 100 100 MAX. 0.25 0.27 3.5 V S UNIT TEST CONDITION VGS = 10 V ID = 13 A 2SK2371 2SK2372
VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 13 A VDS = VDSS, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 13 A VGS = 10 V VDD = 150 V RG = 10 RL = 11.5 ID = 25 A VDD = 400 V VGS = 10 V IF = 25 A, VGS = 0 IF = 25 A, VGS = 0 di/dt = 50 A/S
A
nA pF pF pF ns ns ns ns nC nC nC V ns
C
Test Circuit 1 Avalanche Capability
D.U.T. RG = 25 PG. VGS = 20-0 V 50
Test Circuit 2 Switching Time
D.U.T.
L VDD PG. RG RG = 10
RL VDD
VGS Wave Form
VGS
0 10 % VGS (on) 90 %
ID
90 % 90 % ID 0 10 % td (on) ton tr td (off) toff 10 % tf
BVDSS IAS ID VDD VDS
VGS 0 t t = 1US Duty Cycle 1%
ID Wave Form
Starting Tch
Test Circuit 3 Gate Charge
D.U.T. IG = 2 mA PG. 50
RL VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
2SK2371/2SK2372
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 100 PT - Total Power Dissipation - (W) 210 180 150 120 90 60 30 0 20 40 60 80 100 120 140 160 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
80
60
40
20
0
20
40
60
80
100 120 140 160
TC - Case Temperature - (C) FORWARD BIAS SAFE OPERATING AREA 1 000
ed imit ) n) L S (o RD S = 10 V ( VG
TC - Case Temperature - (C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 20 VGS = 10 V ID - Drain Current - (A) 15 8V 6V Pulsed
TA = 25 C Single Pulse ID (pulse) P W =1 10 0 0 s s 1m s 10 ms
ID - Drain Current - (A)
100 ID (DC) 10
ID (DC)
Po
we
10
rD
iss
ipa
1.0
tio
nL
im
5
itd
5V
0.1 1
10
2SK2371 2SK2372 100
1 000
0
5
10
15
VDS - Drain to Source Voltage - (V) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 100
VDS - Drain to Source Voltage - (V)
ID - Drain Current - (A)
10
1
Tch = 125 C 75 C 25 C -25 C VDS = 10 V Pulsed
0.1
0
5
10
15
VGS - Gate to Source Voltage - (V)
3
2SK2371/2SK2372
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth (t) - Transient Thermal Resistance - (C/W) 1000 100 10 1.0 0.1 0.01 Tc = 25 C Single Pulse 0.001 10 100 1m 10 m 100 m 1 10 100 1000 Rth (ch-c) = 0.78 C/W Rth (ch-a) = 41.7 C/W
PW - Pulse Width - (s) RDS (on) - Drain to Source On-State Resistance - () FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 Tch = -25 C 25 C 75 C 125C 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.5 Pulsed
yfs - Forward Transfer Admittance - (S)
1.0 ID = 25 A 13 A 6A
1.0
0.5
0.1
VDS = 10 V Pulsed 1.0 10 100 1000
0
5
10
15
20
ID - Drain Current - (A) RDS (on) - Drain to Source On-State Resistance - () DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.5
VGS - Gate to Source Voltage - (V) GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 4.0 3.5 3.0 2.5 2.0 1.5 1.0
1.0
0.5 VGS = 10 V
0
1.0
10
100
Pulsed 1000
VGS (off) - Gate to Source Cutoff Voltage - V
-50
0
50
100
150
ID - Drain Current - (A)
Tch - Channel Temperature - (C)
4
2SK2371/2SK2372
RDS (on) - Drain to Source On-State Resistance - (A) DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1.0 ISD - Diode Forward Current - (A) SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100
10 VGS = 10 V
0.5 ID = 25 A 13 A
1.0 VGS = 0 V 0.1
0
-50
0
50
100
150
0.01 0
0.5
1.0
Pulsed 1.5
Tch - Channel Temperature - (C) CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
VSD - Source to Drain Voltage - (V)
SWITCHING CHARACTERISTICS Ciss td (on), tr, td (off), tf - Switching Time - (ns) 1000 tr td (off) 100 td 10 VDD = 150 V VGS = 10 V Rin = 10 10 100
(on)
10000 Ciss, Coss, Crss - Capacitance - pF
1 000 Coss 100 Crss 10 VGS = 0 V f = 1 MHz 0.1 1.0 10 100 1000 VDS - Drain to Source Voltage - (V)
tf
1.0
1.0 0.1
1.0
ID - Drain Current - (A)
REVERSE RECOVERY TIME vs. REVERSE DRAIN CURRENT VDS - Drain to Source Voltage - (V) tW - Reverse Recovery Time - (ns)
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 500 20 18 400 VDD = 400 V 250 V 125 V VGS 200 16 14 12 10 8 6 100 VDS 4 2 60 80 100 0 120 VGS - Gate to Source Voltage - (V)
600 500 400 300 200 100 0.1 1.0 di/dt = 50 A/ s VGS = 0 10 100 IF - Forward Current - (A)
300
0
20
40
Qg - Gate Charge (nC)
5
2SK2371/2SK2372
SINGLE AVALANCHE ENERGY vs. STARTING CHANNEL TEMPERATURE EAS - Single Avalanche Energy - (mJ) 600 500 400 300 200 100 0 25 IAS - Single Avalanche Energy - (A) IAS < 25 A = RG = 25 W VGS = 20 V 0 VDD = 150 V 100 SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD VDD = 150 V RG = 25 VGS = 20 0 V
EA
IAS = 25 A
S
10
=4
46
mJ
1.0 100 1m 10 m 100 m
50
75
100
125
150
Starting Tch - Starting Channel Temperature - (C)
L - Inductive load - (H)
6
2SK2371/2SK2372
REFERENCE
Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037
7
2SK2371/2SK2372
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11

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